Method for determining leak rate through a bond line of a MEMS device
US8579502B2 · kind B2 · utility
1Cited by
19References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Oct 9, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.