Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor
US8580590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Mar 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.