Method of fabricating a semiconductor device having recessed bonding site
US8580594B2 · kind B2 · utility
12Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.