Method of forming resistance variable memory device
US8580606B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Dec 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.