Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
US8580640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Dec 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of a process for manufacturing an electronic device on a semiconductor body of a material with wide forbidden bandgap having a first conductivity type. The process comprises the steps of: forming, on the semiconductor body, a first mask having a first window and a second window above a first surface portion and a second surface portion of the semiconductor body; forming, within the first and second surface portions of the semiconductor body underneath the first and second windows, at least one first conductive region and one second conductive region having a second conductivity type, the first conductive region and the second conductive region facing one another; forming a second mask on the semiconductor body, the second mask having a plurality of windows above surface portions of the first conductive region and the second conductive region; forming, within the first conductive region and the second conductive region and underneath the plurality of windows, a plurality of third conductive regions having the first conductivity type; removing completely the first and second masks; performing an activation thermal process of the first, second, and third conductive regio…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.