Patent · US Active

Method of fabricating high-mobility dual channel material based on SOI substrate

US8580659B2 · kind B2 · utility

10Cited by

4References

10Claims

0Family size

Assignee

SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

Miao Zhang · Beijing, CN
Bo Zhang · Beijing, CN
Zhongying Xue · Shanghai, CN
Xi Wang · Shanghai, CN

Key dates

Filing date	Jul 25, 2011
Grant date	Nov 12, 2013
Priority date	—
Expiry date	Aug 3, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention discloses a method of fabricating high-mobility dual channel material based on SOI substrate, wherein compressive strained SiGe is epitaxially grown on a conventional SOI substrate to be used as channel material of PMOSFET; Si is then epitaixally grown on SiGe, and approaches such as ion implantation and annealing are employed to allow relaxation of part of strained SiGe and transfer strain to the Si layer thereon so as to form strained Si material as channel material of NMOSFET. With simple process and easy realization, this method can provide high-mobility channel material for NMOSFET and PMOSFET at the same time, well meeting the requirement of simultaneously enhancing the performance of NMOSFET and PMOSFET devices and therefore providing potential channel material for CMOS process of the next generation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.