Silicidation and/or germanidation on SiGe or Ge by cosputtering Ni and Ge and using an intralayer for thermal stability
US8580686B1 · kind B1 · utility
3Cited by
3References
15Claims
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Key dates
| Filing date | Apr 23, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Apr 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Formation of a semiconductor device with NiGe or NiSiGe and with reduced consumption of underlying Ge or SiGe is provided. Embodiments include co-sputtering nickel (Ni) and germanium (Ge), forming a first Ni/Ge layer on a Ge or silicon germanium (SiGe) active layer, depositing titanium (Ti) on the first Ni/Ge or Ni/Si/Ge layer, forming a Ti intermediate layer, co-sputtering Ni and Ge on the Ti intermediate layer, forming a second Ni/Ge layer, and performing a rapid thermal anneal (RTA) process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.