Plasma processing method
US8580689B2 · kind B2 · utility
1Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Oct 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.