Method for monitoring ion implantation
US8581217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2010 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Apr 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30433
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.