Electrically pumped optoelectronic semiconductor chip

US8581236B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Matthias Peter · Orpund, CH
• Tobias Meyer · Durham, US
• Jürgen Off · Regensburg, DE
• Tetsuya Taki · Miyoshi, JP
• Joachim Hertkorn · Neukirchen, DE
• Matthias Sabathil · Regensburg, DE
• Ansgar Laubsch · Regensburg, DE
• Andreas Biebersdorf · Regensburg, DE

Key dates

• Filing date: Jun 30, 2010
• Grant date: Nov 12, 2013
• Expiry date: Oct 16, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.