Light-emitting diode chip comprising a contact structure

US8581279B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Johannes Baur · Regensburg, DE
• Volker Harle · Hemau, DE
• Berthold Hahn · Hemau, DE
• Andreas Weimar · Regensburg, DE
• Raimund Oberschmid · Sinzing, DE
• Ewald Guenther · Regenstauf, DE
• Franz Eberhard · Kilchberg, CH
• Markus Richter · Neutraubling, DE
• Jörg Strauss · Augsburg, DE

Key dates

• Filing date: Jun 2, 2006
• Grant date: Nov 12, 2013
• Expiry date: Dec 14, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).