Semiconductor devices having spacers disposed on an inner sidewall of a contact hole formed in a layer of the semiconductor devices, and a contact plug disposed therein
US8581314B2 · kind B2 · utility
6Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Nov 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices that may include a substrate provided with a transistor, an insulating layer disposed on the substrate, the insulating layer including a contact hole exposing a portion of the transistor, a spacer disposed on an inner sidewall of the contact hole, and a contact plug disposed in the contact hole. Here, a space defined by the spacer may increase in width from a bottom side thereof to a top side thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.