Multi-layer gate dielectric
US8581353B2 · kind B2 · utility
5Cited by
11References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2010 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Dec 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor gate dielectric including a first dielectric material having a first dielectric constant and a second dielectric material having a second dielectric constant different from the first dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.