Electrostatic discharge protection circuit for integrated circuits

US8582258B1 · kind B1 · utility

Assignee

• Vishay-Siliconix, LLC · US

Inventors

• Min Luo · Beijing, CN
• Kyle Terrill · Santa Clara, US
• Chrisoph Werres · San Jose, US

Key dates

• Filing date: Sep 1, 2009
• Grant date: Nov 12, 2013
• Expiry date: Sep 1, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/813

Abstract

An electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) that provides ESD protection during an ESD event is disclosed. The electrostatic discharge (ESD) protection circuit includes a first electrostatic discharge (ESD) protection component and a second electrostatic discharge (ESD) protection component coupled in series to the first electrostatic discharge (ESD) protection component. A snapback holding voltage of the electrostatic discharge protection circuit is greater than the operating voltage of the electrostatic discharge protection circuit and a snapback trigger voltage of the electrostatic discharge protection circuit is lower than an oxide breakdown voltage of said integrated circuit.