Word line and power conductor within a metal layer of a memory cell
US8582340B2 · kind B2 · utility
4Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2012 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Jan 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell 6 includes a M3 metal layer which incorporate continuous word lines 12 and power conductors formed of a plurality of separate power line sections 14 running parallel to the word lines. Interstitial gaps between the separate power line sections are larger in size than the power line sections themselves. The power line sections are disposed in a staggered arrangement either side of the word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.