Method for manufacturing vertical-channel tunneling transistor
US8586432B2 · kind B2 · utility
1Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jun 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
The present invention belongs to the technical field of semiconductors and specifically relates to a method for manufacturing a vertical-channel tunneling transistor. In the present invention, the surrounding gate gate structure improves the control capacity of the gate and the source of narrow band gap material can enhance the device driving current. The method for manufacturing a vertical-channel tunneling transistor put forward by the present invention capable of controlling the channel length precisely features simple process, easy control and reduction of production cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.