Method for preparing a layer comprising nickel monosilicide NiSi on a substrate comprising silicon

US8586463B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Fabrice Nemouchi · Moirans, FR
• Veronique Carron · Le Pont-de-Claix, FR

Key dates

• Filing date: Nov 5, 2009
• Grant date: Nov 19, 2013
• Expiry date: May 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a layer including nickel monosilicide NiSi on a substrate including silicon. The method includes the steps of incorporating, on a portion of the thickness of the substrate comprising silicon, an element selected from W, Ti, Ta, Mo, Cr and mixtures thereof; depositing, on the substrate, a layer of nickel and a layer of an element selected from Pt, Pd, Rh, and mixtures thereof or a layer comprising both nickel and an element selected from Pt, Pd, Rh, and mixtures thereof; heating to a temperature sufficient for obtaining the formation of a layer comprising nickel silicide optionally in the form of nickel monosilicide NiSi; incorporating fluorine in the layer; and optionally, heating to a sufficient temperature to convert the layer to a layer comprising nickel silicide entirely in the form of nickel monosilicide NiSi.