Patent · US Active

Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formation

US8586482B2 · kind B2 · utility

3Cited by

11References

20Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

John C. Arnold · North Chatham, US
Sivananda K. Kanakasabapathy · Niskayuna, US
Stefan Schmitz · Stuttgart, DE
Yunpeng Yin · Guilderland, US

Key dates

Filing date	Jun 29, 2011
Grant date	Nov 19, 2013
Priority date	—
Expiry date	Jan 20, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for formation of a fin field effect transistor (FinFET) device includes forming a mandrel mask on a metal hardmask layer of a film stack, the film stack including a silicon on insulator (SOI) layer located underneath the metal hardmask layer; forming a large feature (FX) mask on the metal hardmask layer; etching the mandrel mask and the FX mask simultaneously into the metal hardmask layer; etching the mandrel mask and the FX mask into the SOI layer using the etched metal hardmask layer as a mask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.