P-type semiconductor device comprising type-2 quantum well and fabrication method thereof
US8586964B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2010 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Dec 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/812
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a high-speed p-type semiconductor device using the 2DHG. To this end, the method includes providing a semiconductor substrate; growing a first semiconductor layer on the semiconductor substrate, growing a second semiconductor layer with a different electron affinity or band gap from the first semiconductor layer on the first semiconductor layer, and growing a third semiconductor layer with a different electron affinity or band gap from the second semiconductor layer, thereby forming a type-2 quantum well; and forming a p-type doping layer in the vicinity of the type-2 quantum well, thereby generating the 2DHG.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.