Vertical junction field effect transistors and bipolar junction transistors
US8587024B2 · kind B2 · utility
3Cited by
1References
18Claims
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Key dates
| Filing date | Sep 13, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Sep 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Methods of making semiconductor devices such as vertical junction field effect transistors (VJFETs) or bipolar junction transistors (BJTs) are described. The methods do not require ion implantation. The VJFET device has an epitaxially regrown n-type channel layer and an epitaxially regrown p-type gate layer as well as an epitaxially grown buried gate layer. Devices made by the methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.