Magnetoresistive random access memory and method of manufacturing the same

US8587043B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Katsuaki Natori · Yokohama, JP
• Koji Yamakawa · Tokyo, JP
• Daisuke Ikeno · Yokohama, JP

Key dates

• Filing date: Mar 18, 2011
• Grant date: Nov 19, 2013
• Expiry date: Mar 14, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

According to one embodiment, a magnetoresistive random access memory includes a magnetoresistive element in a memory cell, the magnetoresistive element including a first metal magnetic layer, a second metal magnetic layer, and an insulation layer interposed between the first and second metal magnetic layers. An area of each of the first and second metal magnetic layers is smaller than an area of the insulation layer.