Complementary logic device using spin injection
US8587044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Nov 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A complementary logic device includes: an insulating layer formed on a substrate; a source electrode formed of a ferromagnetic body on the insulating layer; a gate insulating film; a gate electrode formed on the gate insulating film and controlling a magnetization direction of the source electrode; a channel layer formed on each of a first side surface and a second side surface of the source electrode and transmitting spin-polarized electrons from the source electrode; a first drain electrode formed on the first side surface of the source electrode; and a second drain electrode formed on the second side surface of the source electrode, wherein a magnetization direction of the first drain electrode and a magnetization direction of the second drain electrode are antiparallel to each other. Therefore, not only characteristics of low power and high speed but also characteristics of non-volatility and multiple switching by spin may be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.