Semiconductor devices and methods of fabricating the same
US8587052B2 · kind B2 · utility
8Cited by
0References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Feb 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0413
Abstract
One example embodiment of a semiconductor device includes a memory cell array formed on a substrate. The memory cell array includes a gate stack including alternating conductive and insulating layers. A first lower conductive layer in the gate stack has a portion disposed below a first upper conductive layer in the gate stack, and a first contact area of the first lower conductive layer is disposed higher than a second contact area of the first upper conductive layer. The semiconductor device further includes first and second contact plugs extending into the gate stack to contact the first and second contact areas, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.