High-voltage metal-oxide-semiconductor device
US8587056B2 · kind B2 · utility
1Cited by
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8Claims
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Key dates
| Filing date | Mar 14, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Apr 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
A high-voltage MOS transistor includes a gate overlying an active area of a semiconductor substrate; a drain doping region pulled back away from an edge of the gate by a distance L; a first lightly doped region between the gate and the drain doping region; a source doping region in a first ion well; and a second lightly doped region between the gate and the source doping region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.