Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)
US8587066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | May 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device and method is provided that in one embodiment provides a first semiconductor device including a first gate structure on a first channel region, in which a first source region and a first drain region are present on opposing sides of the first channel region, in which a metal nitride spacer is present on only one side of the first channel region. The device further includes a second semiconductor device including a second gate structure on a second channel region, in which a second source region and a second drain region are present on opposing sides of the second channel region. Interconnects may be present providing electrical communication between the first semiconductor device and the second semiconductor device, in which at least one of the first semiconductor device and the second semiconductor device is inverted. A structure having a reverse halo dopant profile is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.