Semiconductor device using a compound semiconductor subtrate
US8587094B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 25, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | May 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor device having an active element and an MIM capacitor and a structure capable of reducing the number of the manufacturing steps thereof and a manufacturing method therefor are provided. The semiconductor device has a structure that the active element having an ohmic electrode and the MIM capacitor having a dielectric layer arranged between a lower electrode and an upper electrode are formed on a semiconductor substrate, wherein the lower electrode and ohmic electrode have the same structure. In an MMIC 100 in which an FET as an active element and the MIM capacitor are formed on a GaAs substrate 10, for example, a source electrode 16a and a drain electrode 16b, which are ohmic electrodes of the FET, are manufactured simultaneously with a lower electrode 16c of the MIM capacitor. Here the electrodes are formed with the same metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.