Patent · US Active

Method for establishing and closing a trench of a semiconductor component

US8587095B2 · kind B2 · utility

0Cited by

1References

16Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Jochen Reinmuth · Reutlingen, DE
Eckhard Graf · Gomaringen, DE

Key dates

Filing date	Jan 11, 2011
Grant date	Nov 19, 2013
Priority date	—
Expiry date	Dec 10, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3025
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for establishing and closing at least one trench of a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one metal layer over the trench to be formed; forming a lattice having lattice openings in the at least one metal layer over the trench to be formed; forming the trench below the metal lattice, and closing the lattice openings over the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.