Global bit line restore by most significant bit of an address line
US8587990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An SRAM circuitry having SRAM cells for storing at least one data word of a length of at least one bit is provided. Each bit of the data words is stored in an assigned SRAM cell, wherein the SRAM circuitry comprises address lines for addressing the at least one data word, a decoding unit for decoding the address signals on the address lines to generate a word line signals on a word line per addressed word, a local bit line to be coupled to SRAM cells of different data words with different addresses, a global bit line to be coupled to the local bit line, and a global bit line restore unit for pre-charging the global bit line. The global bit line restore unit is configured for being triggered by a trigger signal based on the address signal of one of the decoded address lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.