Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device
US8591650B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 25, 2008 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Jul 11, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It is an object to provide a method for forming a crystalline semiconductor film in which a transition layer is not formed or which includes a thinner transition layer than that in a crystalline semiconductor film which is formed by conventional method, and a method for manufacturing a thin film transistor to which the above method is applied. A semiconductor film including hydrogen is formed over a substrate or over an insulating film formed over a substrate. The semiconductor film including hydrogen undergoes surface wave plasma treatment, which is performed in a gas including hydrogen and/or a rare gas, to generate a crystal nucleus in the semiconductor film including hydrogen. The crystal nucleus is grown to form a crystalline semiconductor film by employing a plasma CVD method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.