Compound semiconductor manufacturing device, compound semiconductor manufacturing method, and jig for manufacturing compound semiconductor
US8591656B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2009 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Nov 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When compound semiconductor layers are formed on a compound semiconductor substrate (40) by sequentially layering group III nitride semiconductor crystalline layers by metal organic chemical vapor deposition method, the compound semiconductor substrate (40) is attached inside of a reaction container with the crystal growth surface thereof facing upward, a protection member (60) having plural grooves (63) formed in a radiating manner on the side facing the crystal growth surface is attached above the compound semiconductor substrate (40), and a material gas is supplied to the inside of the reaction container through a first through hole (61) provided in the center of the protection member (60). Thereby, in the manufacture of a compound semiconductor using metal organic chemical vapor deposition method, a decrease in yield caused by adhesion of peeled-off reaction byproducts to the substrate or to the epitaxially grown film on the substrate is suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.