Plasma processing method
US8591752B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2012 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | May 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for plasma-etching a magnetic film and plasma-cleaning, in which deposits in an etching processing chamber are efficiently removed while corrosion of a wafer is suppressed, is provided. A plasma processing method for plasma-etching a to-be-processed substrate having a magnetic film in an etching processing chamber includes the steps of plasma-etching the magnetic film using a first gas not containing chlorine, transferring out the to-be-processed substrate from the etching processing chamber, first plasma-cleaning of the etching processing chamber using a second gas containing chlorine, and second plasma-cleaning using a third gas containing hydrogen after the first plasma cleaning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.