Atomic layer deposition for controlling vertical film growth
US8592005B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 26, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Jan 27, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.