Cost-effective method for extreme ultraviolet (EUV) mask production
US8592102B2 · kind B2 · utility
8Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2009 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Mar 13, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/84
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.