Methods for small trench patterning using chemical amplified photoresist compositions
US8592137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Jan 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a pattern on a substrate is described. The method includes providing a substrate, forming a photosensitive layer over the substrate, exposing the photosensitive layer to a first exposure energy through a first mask, exposing the photosensitive layer to a second exposure energy through a second mask, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a developer solution, at least one photo-acid generator (PAG), and at least one photo-base generator (PBG). A portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.