Replacement gate MOSFET with a high performance gate electrode

US8592266B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Zhengwen Li · Danbury, US
• Dechao Guo · Niskayuna, US
• Randolph F. Knarr · Goldens Bridge, US
• Chengwen Pei · Danbury, US
• Gan Wang · Fishkill, US
• Yanfeng Wang · Qingdao, CN
• Keith Kwong Hon Wong · Wappingers Falls, US
• Jian-Shen Yu · Baoshan, TW
• Jun Yuan · San Diego, US

Key dates

• Filing date: Oct 27, 2010
• Grant date: Nov 26, 2013
• Expiry date: Oct 31, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/66

Abstract

In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.