Modulated deposition process for stress control in thick TiN films
US8592307B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Aug 23, 2012 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Aug 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.