Polishing solution for CMP and polishing method using the polishing solution
US8592317B2 · kind B2 · utility
0Cited by
4References
19Claims
0Family size
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Inventors
Key dates
| Filing date | May 6, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Oct 30, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.