Electrode diffusions in two-terminal non-volatile memory devices

US8592793B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• Xiying Chen · San Jose, US
• Huiwen Xu · Shanghai, CN
• Chuanbin Pan · Sunnyvale, US

Key dates

• Filing date: May 4, 2011
• Grant date: Nov 26, 2013
• Expiry date: Oct 27, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8845

Abstract

A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded.