Resistance random access memory element and method for making the same

US8592794B2 · kind B2 · utility

Assignee

• NATIONAL SUN YAT-SEN UNIVERSITY

Inventors

• Ting-Chang Chang · Hsinchu, TW
• Po-Chun Yang · Taipei, TW
• Yu-Shih Lin · Tainan, TW
• Shih-Ching Chen · Taipei, TW
• Fu-Yen Jian · Kaohsiung, TW

Key dates

• Filing date: May 20, 2011
• Grant date: Nov 26, 2013
• Expiry date: May 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistance random access memory element includes a first electrode, an insulating layer, a diffusing metal layer, and a second electrode superimposed in sequence. The insulating layer includes a plurality of pointed electrodes. A method for making a resistance random access memory element includes growing and forming an insulating layer on a surface of a first electrode. A diffusing metal layer is formed on a surface of the insulating layer. A second electrode is mounted on a surface of the diffusing metal layer. A negative pole and a positive pole of a driving voltage are connected with the first and second electrodes, respectively. The diffusing metal in the diffusing metal layer is oxidized into metal ions by the driving voltage. The metal ions are driven into the insulating layer and form a plurality of pointed electrodes after reduction.