Phase-change random access memory device and method of manufacturing the same
US8592796B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Dec 15, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Dec 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
Abstract
A phase-change random access memory device includes a semiconductor substrate, an interlayer dielectric layer formed over the semiconductor substrate and having contact holes defined therein, metal contacts formed in the contact holes, an ohmic contact layer formed over the metal contacts and having recesses defined therein, and switching elements formed over the recesses of the ohmic contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.