Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN

US8592840B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Matthias Peter · Orpund, CH
• Tobias Meyer · Durham, US
• Nikolaus Gmeinwieser · Donaustauf, DE
• Tetsuya Taki · Miyoshi, JP
• Hans-Jürgen Lugauer · Sinzing, DE
• Alexander Walter · Hemau, DE

Key dates

• Filing date: Dec 20, 2010
• Grant date: Nov 26, 2013
• Expiry date: Dec 20, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0<x≦1, which is situated at a same side of the active zone as the n-doped layer sequence.