Semiconductor structure and method for making same

US8592883B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dieter Claeys · Burglengenfeld, DE
• Bernd Eisener · Höhenkirchen-Siegertsbrunn, DE
• Guenter Pfeifer · Pentling, DE
• Detlef Wilhelm · Regensburg, DE

Key dates

• Filing date: Sep 15, 2011
• Grant date: Nov 26, 2013
• Expiry date: Sep 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/85

Abstract

An embodiment may be a semiconductor structure, comprising; a workpiece having a front side and a back side; and a capacitor disposed in the workpiece, the capacitor including a bottom electrode electrically coupled to a back side of said workpiece. In an embodiment, the bottom electrode may form a conductive pathway to the front side of the workpiece. In an embodiment, the capacitor may be a trench capacitor.