Semiconductor memory device and method for manufacturing same
US8592890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Dec 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
According to one embodiment, a semiconductor memory device includes a stacked body, a contact, a semiconductor member, a charge storage layer, and a penetration member. The stacked body includes an electrode film stacked alternately with an insulating film. A configuration of an end portion of the stacked body is a stairstep configuration having a step provided every electrode film. The contact is connected to the electrode film from above the end portion. The semiconductor member is provided in a portion of the stacked body other than the end portion to pierce the stacked body in a stacking direction. The charge storage layer is provided between the electrode film and the semiconductor member. The penetration member pierces the end portion in the stacking direction. The penetration member does not include the same kind of material as the charge storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.