High-voltage semiconductor device
US8592905B2 · kind B2 · utility
3Cited by
56References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | May 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
Abstract
A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.