Semiconductor device and method of fabricating the same
US8592912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Jan 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a plurality of conductive patterns stacked on a substrate and spaced apart from each other and a pad pattern including a flat portion extending in a first direction parallel to the substrate from one end of any one of the plurality of conductive patterns, and a landing sidewall portion extending upward from a top surface of the flat portion, wherein a width of a portion of the landing sidewall portion in a second direction parallel to the substrate and perpendicular to the first direction is less than a width of the flat portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.