Patent · US Active

Transistor device and a method of manufacturing the same

US8592922B2 · kind B2 · utility

4Cited by

1References

17Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Jacob C. Hooker · Hamburg, DE
Markus Mueller · Heilbronn, DE

Key dates

Filing date	Jun 3, 2009
Grant date	Nov 26, 2013
Priority date	—
Expiry date	Oct 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/859
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A transistor device is provided that includes a substrate, a first channel region formed in a first portion of the substrate and being doped with a dopant of a first type of conductivity, a second channel region formed in a second portion of the substrate and being doped with a dopant of a second type of conductivity, a gate insulating layer formed on the first channel region and on the second channel region, a dielectric capping layer formed on the gate insulating layer, a first gate region formed on the dielectric capping layer over the first channel region, and a second gate region formed on the dielectric capping layer over the second channel region, wherein the first gate region and the second gate region are made of the same material, and wherein one of the first gate region and the second gate region comprises an ion implantation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.