Fuse structure having crack stop void, method for forming and programming same, and design structure
US8592941B2 · kind B2 · utility
5Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2010 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Nov 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates generally to fuse structures, methods of forming and programming the same, and more particularly to fuse structures having crack stop voids. The fuse structure includes a semiconductor substrate having a dielectric layer thereon and a crack stop void. The dielectric layer includes at least one fuse therein and the crack stop void is adjacent to two opposite sides of the fuse, and extends lower than a bottom surface and above a top surface of the fuse. The disclosure also relates to a design structure of the aforementioned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.