Power semiconductor module and method for operating a power semiconductor module

US8593817B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Reinhold Bayerer · Warstein, DE
• Thilo Stolze · Arnsberg, DE

Key dates

• Filing date: Sep 30, 2010
• Grant date: Nov 26, 2013
• Expiry date: Jul 21, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/24752
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module is provided in which power semiconductor chips with an aluminum-based chip metallization and power semiconductor chips with a copper-based chip metallization are included in the same module, and operated at different barrier-layer temperatures during use.