Method for manufacturing a device on a substrate

US8597531B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Sandra Obernhuber · Lappersdorf, DE
• Christof Jalics · Aalen, DE
• Joerg Adler · Meißen, DE
• Uwe Hoeckele · Regensburg, DE
• Walter Preis · Regensburg, DE
• Reinhard Goellner · Regensburg, DE
• Tanja Schest · Steinberg am See, DE
• Patricia Nickut · Burghausen, DE

Key dates

• Filing date: Apr 2, 2009
• Grant date: Dec 3, 2013
• Expiry date: May 16, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03H3/04
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.