Resistive memory device and method for fabricating the same
US8598011B2 · kind B2 · utility
3Cited by
0References
9Claims
0Family size
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Key dates
| Filing date | Dec 17, 2010 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Apr 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A resistive memory device includes a plurality of resistive units, each resistive unit including: a lower electrode formed over a substrate; a resistive layer formed over the lower electrode; and an upper electrode formed over the resistive layer, wherein edge parts of the lower and upper electrodes, which come in contact with the resistive layer, is formed with a rounding shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.